During the investigation, a step function is applied to a semiconductor using the thermal transient method. The resulting step response is measured. With the help of a calibration, the thermal response, the Zth curve, can be determined. This Zth curve contains the complete information about the thermal resistances and heat capacities of the individual layers in the heat path and thus the bulk and contact resistances.
By measuring of the thermal resistances at different shear offsets, the development of the bulk and contact resistances of the interface material can be determined. In this way, conclusions can be drawn about the degradation behaviour of the material.